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mbrp400100ctl using the Schottky Barrier principle with a platinum barrier metal. These
state–of–the–art devices have the following features:
Features:
Dual Diode Construction — May be Paralleled for Higher Current Output
Guardring for Stress Protection
Low Forward Voltage Drop
150C Operating Junction Temperature
Recyclable Epoxy
Guaranteed Reverse Avalanche Energy Capability
Improved Mechanical Ratings
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