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 MITSUBISHI IGBT MODULES CM200DU-24F

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Fengsheng02




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Registration date : 2011-09-23

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PostSubject: MITSUBISHI IGBT MODULES CM200DU-24F   MITSUBISHI IGBT MODULES CM200DU-24F EmptySat Nov 12, 2011 1:09 pm

MITSUBISHI IGBT MODULES CM200DU-24F

CM200DU-24FNote 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Tc measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.

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